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| AUIRFR2405 hexfet ? power mosfet www.irf.com 1 pd - 97688a automotive grade s d g gds gate drain source d-pak AUIRFR2405 features dynamic dv/dt rating ! " # "! ! $ % " & '# ! (! )* description !" # $ % & '% ' % # !" ( ) ' % & absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ parameter units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, vgs @ 10v (silicon limited) a i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) thermal resistance parameter typ. max. units r jc junction-to-case ??? 1.4 r ja junction-to-ambient (pcb mount) ??? 50 c/w r ja junction-to-ambient ??? 110 5.0 11 130 34 110 0.71 20 max. 56 40 220 30 -55 to + 175 300 v (br)dss 55v r ds(on) typ. 11.8m max 16m i d (package limited) 30a 2 www.irf.com s d g repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.22mh r g = 25 , i as = 34a. i sd 34a, di/dt 190a/ s, v dd v (br)dss , t j 175c. pulse width 300 s; duty cycle 2%. s d g c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . calculated continuous current based on maximum allowable junction temperature. package limitation current is 30a. when mounted on 1" square pcb (fr-4 or g-10 material) . for recommended footprint and soldering techniques refer to application note #an-994. r is measured at t j of approximately 90c. static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 55 ??? ??? v . 0.0 11. 1 .0 .0 0 0 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 200 na gate-to-source reverse leakage ??? ??? -200 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? 70 110 q gs gate-to-source charge ??? 16 23 nc q gd gate-to-drain ("miller") charge ??? 19 29 t d(on) turn-on delay time ??? 15 ??? t r rise time ??? 130 ??? t d(off) turn-off delay time ??? 55 ??? ns t f fall time ??? 78 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 2430 ??? c oss output capacitance ??? 470 ??? pf c rss reverse transfer capacitance ??? 100 ??? c oss output capacitance ??? 2040 ??? c oss output capacitance ??? 350 ??? c oss eff. effective output capacitance ??? 350 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 56 (body diode) a i sm pulsed source current ??? ??? 220 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 62 93 ns q rr reverse recovery charge ??? 170 260 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) t j = 25c, i f = 34a di/dt = 100a/ s t j = 25c, i s = 34a, v gs = 0v showing the integral reverse p-n junction diode. conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 34a mosfet symbol v dd = 28v i d = 34a r g = 6.8 conditions r d = 10 v gs = 0v ? = 1.0mhz, see fig. 5 v gs = 0v, v ds = 0v to 44v v gs = 0v, v ds = 44v, ? = 1.0mhz v gs = 0v, v ds = 1.0v, ? = 1.0mhz v ds = 25v, i d = 34a i d = 34a v ds = 44v v gs = 20v v gs = -20v v gs = 10v v ds = 55v, v gs = 0v v ds = 44v, v gs = 0v, t j = 150c m v ds = 25v conditions v ds = v gs , i d = 250 a www.irf.com 3 + (! ) , )! - ) . , / 001 )1 0 ++ 2% 3) 4 2 (5 6! 6! ) 1 +++ ' 1 qualification information ? d-pak msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (+/- 2000v) ??? aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m4 (+/- 500v) ??? aec-q101-002 human body model class h1c (+/- 2000v) ??? aec-q101-001 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 0.1 1 10 100 20 s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v = 25v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 56a www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 20 40 60 80 100 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 34a v = 11v ds v = 27v ds v = 44v ds 1 10 100 1000 0.4 0.8 1.2 1.6 2.0 2.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 1 10 100 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 0 800 1600 2400 3200 4000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 6 www.irf.com fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms 1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 10 20 30 40 50 60 t , case temperature ( c) i , drain current (a) c d limited by package www.irf.com 7 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 40 80 120 160 200 240 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 14a 24a 34a 8 www.irf.com fig 14. for n-channel hexfet power mosfets peak diode recovery dv/dt test circuit + - + + + - - - ? ? ? !" # # ? $ %!& !% ? &' ! ? !( ? &'& ) * ! %! + p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period * ,- +&*& * www.irf.com 9 * + , -. /0 ' .11 &&1(1 d-pak part marking information 7 89 8 ::9 : ; :; 9 ! & " 10 www.irf.com !" # * + , tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch www.irf.com 11 ordering information base part number package type standard pack complete part number form quantity AUIRFR2405 dpak tube 75 AUIRFR2405 tape and reel 2000 AUIRFR2405tr tape and reel left 3000 AUIRFR2405trl tape and reel right 3000 AUIRFR2405trr 12 www.irf.com 2 ( / 0 3 ' +/0, ( & ' 425 ) 1 $ & '6 /07 ( & /0 ' /07 & $ $ ) /0 & ) ' $ & /0 ' & 3 ' /0 & # ( $ & 0 /0 /0 '( ' ' & 0 % ' & /0 ' ' & / ' '6 & 0 /0 ' ' /0 ) /0 ' & /0 ' ' & /0 # ' /0 6 & 8 /0 # 8 / 0 ' ' ) ' 6 # /0 & " ' * 9 +*9, 2 * * *9 $ ' & 8 ( /0 ' *9 % $ 8 7 ( ' $ & /0 /0 ' /0 /"1 :;<=< $ ' ' 425& 8 ( % /0 ' ' $ & " ! & -. /001 )1 0 )0 . ! / 01*!0% + 234- 5673-3$8- |
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